Bøger i Microdevices serien

This volume describes the underlying concepts in materials science and device physics within the context of narrow gap semiconductors, in addition to their relationship to opto-electronic devices. Topics include impurities and defects, recombination mechanisms and surface and interface properties.

Edge-Preserving Regularization for Quantitative Reconstruction Algorithms in Microwave Imaging . . . . . . . . . . . . . . . . . . . . . . . . .. . . 113 . . . . . . .

Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions.

Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions.

Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions.

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec.

In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications.

In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer.

The field of electron and ion optics is based on the analogy between geometrical light optics and the motion of charged particles in electromagnetic fields. Because of the diffraction limitation of processes using optical photons and the technological difficulties connected with x-ray processes, charged particle beams are becoming popular.

The updated edition of this book provides comprehensive coverage of fundamental semiconductor physics. It has been revised to reflect advances in semiconductor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace.

In fabricating a semiconductor device such as a transistor, a series of hot processes consisting of vacuum film deposition, oxidations, and dopant implantation are all patterned into microscopic circuits by the wet processes of lithography.

First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices.

In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec.

Aims to provide an introductory perspective of the basic principles of semiconductors, being an integrated overview of the basic properties, applications, and characterization of semiconductors. This book is suitable for both undergraduates and graduates, and for researchers, working in a variety of fields in physical and engineering sciences.

Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials.

In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer.

In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications.

In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds.

i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip.

Although exploratory and developmental activity in electron beam testing (EBT) 25 years, it was not had already been in existence in research laboratories for over until the beginning of the 1980s that it was taken up seriously as a technique for integrated circuit (IC) testing.

photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds.

photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Although exploratory and developmental activity in electron beam testing (EBT) 25 years, it was not had already been in existence in research laboratories for over until the beginning of the 1980s that it was taken up seriously as a technique for integrated circuit (IC) testing.

i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip.

Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions.

In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.