Bøger i Nato Science Series E: serien

Decreasing power dissipation per logic function has become a primary concern in virtually all CMOS system chips designed today as a result of the relentless progress in processing technology that has led us into the deep-submicron age. Evolution from 1 micron to 0.1 micron lithography in the next decade will not be possible without a change in the way we design CMOS systems. But power reduction requires an overall optimisation, ranging from software compilation over instruction set design down to the introduction of much more parallelism in the architecture, the optimal use of memory hierarchy, new clocking strategies, use of asynchronous techniques, new CMOS circuit techniques and management of leakage currents in new low power technologies. Moreover, performance and power dissipation will come to be dominated by interconnect and thus completely new floor planning and place and route strategies are emerging. The chapters in this book present a systematic coverage of deep submicron CMOS digital system design for low power, from process technology all the way up to software design and embedded software systems. Audience: An excellent guide for the practising engineer, researcher and student interested in this crucial aspect of actual CMOS design.

Progress in the development of oxygen ion and mixed conductors is responsible for innovations in the fields of gas sensors, fuel cells, oxygen permeation membranes, oxygen pumps and electrolyzers. Commercialization has been impeded by materials stability and compatibility issues, high costs of fabrication and inadequate understanding of the interfacial phenomena controlling the operation of these devices. In this text we assemble a unique group of experts whose articles straddle, for the first time, all the key topical areas ranging from fundamentals relating to (a) defects, electrochemical, and interfacial processes, (b) catalysis, electrocatalysis and gas reforming, to design and fabrication including (c) advanced electroceramic processing methods, (d) materials selection and optimization, (e) and applications including scale up, commercialization and competitive technologies. This material was first presented at a NATO Advanced Study Institute held in Erice, Sicily, Italy during the period july 15-30, 1997. All the participants benefited from the integrated and synthetic approach taken to the subject matter with liberal use of examples and case studies. Many opportunities were made available for critical discussions of the key concepts and issues both within the formal sessions as well as in the cafes and restaurants which populate Erice. I join the co-organizers of the Advanced Study Institute, Professors J. Schoonman, I. Riess and M. Balkanski, in thanking NATO for providing support for the ASI. Thanks are also due to Dr.

1. H. Ahmed In-Situ Processing Canbining MBE, Lit:hJgraphy and Ion-Implantation 2. 1. Hayashi M::>tivations and Early DenDnstrations for In-Situ Prcx::essings For III -V Semiconductor Devices 13 3. John J. Ritsko Laser Etchi. nJ and Microelectronic Applications 23 4. D. Bauerle, T. Szorenyi, G. Q. Zhang, K. Piglmayer, M. Eyett, R. Kullmer Laser-Induced O1emical Processing of Materials 33 5. E. L. Hu High Technology Manufacturing : Critical Issues for the Future 45 6. J. P. Harbison, P. F. Liao, D. M. Hwang, E. Kapon, M. C. Tamargo, G. E. Derkits Jr. and J. Levkoff U1 tra High Vacuum Processing : MBE 55 7. P. N. Favennec, H. L'Haridon, M. Salvi, L. Henry, A. Le Cerre, D. Lecrosnier, M. A. Di Forte Poisson, J. P. Duchemin Epitaxial Growth of III-V Materials on Implanted III-V Substrates 61 8. R. L. Jackson, T. T. Kodas, G. W. Tyndall, T. H. Baum and P. B. Canita Mechanisms of Laser-Induced Deposition fran the Gas Phase 71 9. D. Braichotte and H. Van Den Bergh Tline Resolved Measurements in the Thennally Assisted Photolytic Laser O1emical Vapor Deposition of Platinum 83 10. M. Rothschild and D. J. Ehrlich Excliner Laser Projection Patterning 93 11. P. H. Key, P. E. Dyer, R. D. GreenJugh Excliner Laser Patterning and Etchi. nJ of Metals 105 12. G. Steng1, H. Loschner, E. Hanme1, E. D. Wolf, J. J. Muray Ion Projection Lit:hJgraphy 113 13. J. E. Bouree and J.

Two previous NATO Advanced Study Institutes (ASI) on berthing and mooring of ships have been held; the first in Lisboa, Portugal in 1965, and the second at Wallingford, England in 1973. These ASls have contributed significantly to the under­ standing and development of fenders and mooring, as have works by Oil Companies International Marine Forum (1978) and PIANC (1984). Developments in ship sizes and building of new specialized terminals at very exposed locations have necessitated further advances in the combined mooring and fendering technology. Exploration and exploitation of the continental shelves have also brought about new and challenging problems, developments and solutions. Offshore activities and developments have in­ fluenced and improved knowledge about both ships and other floating structures which are berthed and/or moored under various environmental conditions. The scope of this ASI was to present recent advances in berth­ ing and mooring of ships and mooring of floating offshore structures, focusing on models and tools available with a view towards safety and reduction of frequencies and consequences of accidents.

Proceedings of the NATO Advanced Study Institute, Erice, Italy, May 10-20, 1986

High blood pressure (BP) (with fats and smoking) is one of the three roots of cardio-cerebro-renovascular disease affecting up to 25% of the adult population. Hence, high blood pressure should be recognized and treated, to reduce any complications and prolong life, as noted by Michael Weber of the Veterans Administration Hospital in Long Beach, California. He further emphasizes the need for monitoring before one starts the treatment of high blood pressure. Indeed, he refers to the results of the Australian study on mild hypertension with a large percentage of placebo­ responders and rightly suggests that many people are treated who should not be because of 'white-coat-associated high blood pressure'. He also points to the lack of standardization of techniques for data analysis and of methods of BP measurement. Ambulatory monitoring under usual condi­ tions without concomitant recording of events does not allow even a qualitative assessment of the impact of varying stimuli, in weber's opinion.

An Advanced Study Institute on Ultrasonics in Medical Diagnosis was held in Milan, Italy, from 10 to 15 June 1974. This ASI was of a short five-day duration and limited to cardiac diagnosis by ultra­ sound only. Since that time, the field of diagnostic imaging in medicine has literally exploded with new and improved means of medical diagnosis such as computed tomography, microwaves, nuclear magnetic resonance and other sophisticated techniques. These developments have enabled medical practitioners to make diagnoses with a minimum of danger to the patient, and a maximum of accuracy never before possible, and represent a multi-quantum advance over the early state-of-the-art presented at the 1974 ASI. Since then, several meetings have taken place on these individual topics to bring together experts who presented their latest research results, but none have discussed the entire field of diagnostic imaging in medicine in one meeting nor have they had the teaching character of an Advanced Study Institute. The art and science of medicine have been altered repeatedly during the eight year interval since the last ASI. Today's clinician must be part technologist and must be enough of an investigator to understand and appreciate the scientific method. The current complex advances in instrumentation and pharmacology have had a marked effect on how medicine is practiced. There was, therefore, an urgent need to bring the entire field of imaging in medicine to one teaching podium where the many advances of the last six or seven years could be reviewed.

GaAs on Si: Device Applications.- Substrate Considerations.- Majority-Carrier Devices.- Minority-Carrier Devices.- Conclusions.- Ion Beam Synthesis in Silicon.- The Ion Implantation Process.- Buried SiO2 Layers in Si.- Buried Monocrystalline CoSi2 Layers in Si.- Conclusions.- Ion Beam Processing of Chemical Vapor Deposited Silicon Layers.- Ion Beam Effects.- Epitaxy of Deposited Layers.- Polycrystal Formation.- Technology and Devices for Silicon Based Three-Dimensional Circuits.- 3D-Technology.- Device Characteristics.- Features of 3D-Circuits.- Demonstrators.- Conclusions.- Integrated Fabrication of Micromechanical Structures on Silicon.- Mechanical Properties of Silicon.- Thermal Properties.- Fabrication Techniques.- Etching.- Anisotropic Etching.- Boron Doped Etch Stop.- Electrochemical Etch Stop.- Embedded Layers.- Surface Microstructures.- Bonding of Layers.- Electrostatic Bonding.- Oxide Bonding.- Bonding to Metals.- Conclusion.- Micromachining of Silicon for Sensors.- Physical Properties of Silicon.- Transduction Techniques.- Fabrication Techniques.- Pressure Sensors.- Accelerometers.- Microresonator Sensors.- Optical Microresonator Sensors.- Conclusions.- Micromachining of Silicon for Sensors.- Hybrid or Monolithic Approach for optoelectronics: That is the question.- About the Hybrid Approach Material Competitors.- Silicon Based Technologies developed at LETI.- Planar and Channel waveguide Properties of IOS Technologies.- Field of Activities.- Integrated Optical Spectrum Analyser (IOSA).- Integrated Optical Sensors.- Optical Communication Applications.- Optical Memories.- Conclusion.- Principles and Implementation of Artificial Neural Networks.- Binary Networks.- Analog Networks.- Miscellaneous Networks.- Future VLSI Networks.- Conclusions.- List of Participants.

Proceedings of the NATO Advanced Study Institute, Alvor, Algarve, Portugal, May 18-30, 1987

Proceedings of the NATO Advanced Study Institute on Progress in Catalyst Deactivation, Algarve, Portugal, May 1981

A NATO Advanced Study Institute (ASI) on the Behavior of Systems in the Space Environment was held at the Atholl Palace Hotel, Pitlochry, Perthshire, Scotland, from July 7 through July 19, 1991.

Proceedings of the NATO Advanced Study Institute on Fast Electrical and Optical Diagnostic Principles and Techniques, Il Ciocco, Castelvecchio Pascoli, Italy, July 10-24, 1983

Proceedings of the NATO Advanced Research Workshop on the Advances in Two-Phase Flow and Heat Transfer, Spitzingsee, Germany, August 31-September 3, 1982

These proceedings contain lectures and contributed papers presented at the NATO-NSF Advanced Stucy Institute on Optimization of Distributed Parameter Structures (Iowa City, Iowa 21 May - 4 June, 1980).

Technology transfer has been variously defined as: the process of information transfer between science, technology and actual utilization of scientific data and ideas, to wit: production of goods and services;

In order to illust rate the scientific and technical expertise required in the necessary detail it was deemed essential in this Advanced Study Institute to concentrate on specific case studies utilizing a range of actual sites.

Proceedings of the NATO Advanced Research Workshop on The Design, Activation, and Transformation of Organometallics into Common and Exotic Materials, Cap D'Agde, France, September 1-5, 1986

Proceedings of the NATO Advanced Research Workshop, Reichenhall, Germany, June 23-July, 1986

Proceedings of the NATO Advanced Study Institute held in Viana do Castelo, Portugal, July 16-27, 1984

Proceedings of the NATO Advanced Research Workshop held at Vilamoura (Algarve), Portugal, March 31-April 4, 1986

Proceedings of the NATO Advanced Study Institute, Erice, Italy, October 15-25, 1985

Proceedings of the NATO Advanced Study Institute, Bursa, Turkey, August 20-31, 1984

Proceedings of the NATO Advanced Research Workshop, Theuern, Germany, March 18-22, 1985

Proceedings of the NATO Advanced Study Institute, Cap d'Agde, France, June 13-25, 1982

Proceedings of the NATO Advanced Research Workshop on Asymmetric Catalysis, Sanibel Island, Florida, USA, January 2-6, 1984

Proceedings of the NATO Advanced Research Workshop on Application of Fracture Mechanics to Cementitious Composites, Northwestern University, Evanston, Illinois, USA, September 4-7, 1984