Bøger af B. Jayant Baliga

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.

Provides a cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. This book uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.

This work describes the devices used in microelectronics production and power transmission equipment, and in very high-power motor control such as electric trains and steel-mills. It discusses advanced concepts enabling improved power thyristor performance.

This text offers an in-depth treatment of the physics of operation of advanced power MOSFETs. It provides analytical models for explaining the operation of all advanced power MOSFETs as well as the results of numerical and two-dimensional simulations.

In this exhaustive treatment of the operational physics of advanced power rectifiers, analytical models for explaining the workings of all advanced power rectifier devices are developed, and the results of numerical and two-dimensional simulations provided.

This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.

A comprehensive resource of power device electrical characteristics in a cryogenic environment. It presents the different characteristics of power devices operated below -55 C (220K). It provides data and physics based models for power devices operated at temperatures down to 77K for the first time within a single source.