Bøger af Roland Kircher

The question of whether or not to innovate urban maglev systems will depend on factors such as operational advantages, environmental impact, investment and operating costs, social acceptance and, above all, the specific transport needs of the city or region concerned. Only if urban maglev systems offer clear advantages over existing conventional transport systems, such as local wheel-rail trains, regional trains, metros, trams and buses, will they be able to establish themselves in the transport market. The study shows how the international transport industry assesses the competitiveness of urban and regional maglev systems in comparison with established passenger and freight transport systems. -------------------------------------------------------------------Die Einführung und Verbreitung von Magnetbahnsystemen in Städten und Regionen wird unter anderem von Faktoren wie betrieblichen Vorteilen, Umweltauswirkungen, Investitionskosten, Betriebskosten, gesellschaftlicher Akzeptanz und vor allem von den spezifischen Verkehrsbedürfnissen der jeweiligen Stadt oder Region abhängen. Urbane Magnetbahnsysteme werden sich nur dann auf dem Verkehrsmarkt etablieren können, wenn sie gegenüber den bestehenden konventionellen Verkehrssystemen wie Rad-Schiene-S-Bahn, Regionalbahn, U-Bahn, Straßenbahn und Bus deutliche Vorteile bieten. In dieser Studie wird die Einschätzung der internationalen Verkehrswirtschaft zur Wettbewerbsfähigkeit von Magnetschwebebahnen im Vergleich zu den etablierten Systemen des Personen- und Güterverkehrs dargestellt.

The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complex­ ity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen­ sion had to be utilized to realize the storage capacitor. The result­ ing leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device re­ search and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities con­ cerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconduc­ tor equations, discusses the physical models used in device simu­ lation, describes the discretization and some numerical methods for solving the differential equations. The application of the three­ dimensional simulation to VLSI device engineering is illustrated by a few specific examples.