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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Bag om Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9780127521466
  • Indbinding:
  • Hardback
  • Sideantal:
  • 316
  • Udgivet:
  • 12. juni 1997
  • Størrelse:
  • 152x229x22 mm.
  • Vægt:
  • 620 g.
  • BLACK NOVEMBER
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Leveringstid: 2-3 uger
Forventet levering: 11. december 2024

Beskrivelse af Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

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