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Modeling and Parameter Extraction Techniques of Silicon-Based Radio Frequency Devices

Bag om Modeling and Parameter Extraction Techniques of Silicon-Based Radio Frequency Devices

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9789811255359
  • Indbinding:
  • Hardback
  • Sideantal:
  • 322
  • Udgivet:
  • 21. marts 2023
  • Størrelse:
  • 157x22x235 mm.
  • Vægt:
  • 621 g.
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Leveringstid: 2-3 uger
Forventet levering: 19. december 2024
Forlænget returret til d. 31. januar 2025

Beskrivelse af Modeling and Parameter Extraction Techniques of Silicon-Based Radio Frequency Devices

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.
The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

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