Udvidet returret til d. 31. januar 2024

Modern Silicon Carbide Power Devices

Bag om Modern Silicon Carbide Power Devices

Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them. This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized. This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9789811284274
  • Indbinding:
  • Hardback
  • Sideantal:
  • 672
  • Udgivet:
  • 18. september 2023
  • Størrelse:
  • 157x40x235 mm.
  • Vægt:
  • 1110 g.
  • BLACK NOVEMBER
  Gratis fragt
Leveringstid: 8-11 hverdage
Forventet levering: 20. november 2024

Beskrivelse af Modern Silicon Carbide Power Devices

Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.
This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.
This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.

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