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  4. Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

af Jie Cheng

indgår i Springer Theses serien

Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect af Jie Cheng
Bag om Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material.

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  • Sprog:
  • Engelsk
  • ISBN:
  • 9789811061646
  • Indbinding:
  • Hardback
  • Sideantal:
  • 137
  • Udgivet:
  • 18. september 2017
  • Udgave:
  • 12018
  • Vægt:
  • 3613 g.
  • BLACK NOVEMBER
  Gratis fragt
Leveringstid: 8-11 hverdage
Forventet levering: 6. december 2024

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This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material.

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